IRLU024ZPBF
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- Mfr.Part #
- IRLU024ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 16A I-PAK
- Stock
- 4,770
- In Stock ：
- 4,770
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation :
- 35mW
- Mounting Type :
- Through Hole
- Published :
- 2004
- Max Operating Temperature :
- 175°C
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On (Max) @ Id, Vgs :
- 58mOhm @ 9.6A, 10V
- Continuous Drain Current (ID) :
- 16A
- Dual Supply Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Elements :
- 1
- Rise Time :
- 43ns
- Drain to Source Resistance :
- 58mOhm
- Power Dissipation-Max :
- 35W Tc
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 8.2 ns
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 380pF
- Voltage - Rated DC :
- 55V
- Height :
- 6.22mm
- Resistance :
- 58mOhm
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Mount :
- Through Hole
- Width :
- 2.3876mm
- Drain to Source Voltage (Vdss) :
- 55V
- Number of Pins :
- 3
- Rds On Max :
- 58 mΩ
- Current Rating :
- 16A
- RoHS Status :
- RoHS Compliant
- Termination :
- Through Hole
- Fall Time (Typ) :
- 16 ns
- Nominal Vgs :
- 3 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7056mm
- Turn-Off Delay Time :
- 19 ns
- Series :
- HEXFET®
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.9nC @ 5V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Supplier Device Package :
- I-PAK
- Radiation Hardening :
- No
- Datasheets
- IRLU024ZPBF
IRLU024ZPBF Documents
N-Channel Tube 58mOhm @ 9.6A, 10V ±16V 380pF @ 25V 9.9nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRLU024ZPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 380pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 58mOhm.A turn-on delay time of 8.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRLU024ZPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 58mOhm
a 55V drain to source voltage (Vdss)
IRLU024ZPBF Applications
There are a lot of Infineon Technologies
IRLU024ZPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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