IRLU024N
- Mfr.Part #
- IRLU024N
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 17A I-PAK
- Stock
- 13,655
- In Stock :
- 13,655
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain-source On Resistance-Max :
- 0.08Ohm
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- JESD-30 Code :
- R-PSIP-T3
- Published :
- 2000
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±16V
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 55V
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 10A, 10V
- Power Dissipation-Max :
- 45W Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 17A
- Number of Terminations :
- 3
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 55V
- Series :
- HEXFET®
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 72A
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 245
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Datasheets
- IRLU024N
IRLU024N Documents

N-Channel Tube 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRLU024N Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU024N Features
-
Logic-Level Gate Drive
-
Surface Mount (IRLR024N)
-
Straight Lead (IRLU024N)
-
Advanced Process Technology
-
Fast Switching
-
Fully Avalanche Rated
IRLU024N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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