IRLU024N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.08Ohm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSIP-T3

Published :

2000

Case Connection :

DRAIN

Vgs (Max) :

±16V

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

65m Ω @ 10A, 10V

Power Dissipation-Max :

45W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

17A

Number of Terminations :

3

Packaging :

Tube

Drain to Source Voltage (Vdss) :

55V

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

68 mJ

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

72A

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified