IRLU024N
- Mfr.Part #
- IRLU024N
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 17A I-PAK
- Stock
- 13,655
- In Stock :
- 13,655
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- DS Breakdown Voltage-Min :
- 55V
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 10A, 10V
- JESD-30 Code :
- R-PSIP-T3
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Terminal Position :
- Single
- Published :
- 2000
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- JESD-609 Code :
- e0
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 45W Tc
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 245
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- RoHS Status :
- Non-RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 72A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Voltage (Vdss) :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 17A
- Drain-source On Resistance-Max :
- 0.08Ohm
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Datasheets
- IRLU024N
IRLU024N Documents

N-Channel Tube 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRLU024N Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU024N Features
-
Logic-Level Gate Drive
-
Surface Mount (IRLR024N)
-
Straight Lead (IRLU024N)
-
Advanced Process Technology
-
Fast Switching
-
Fully Avalanche Rated
IRLU024N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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