IRLU120NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Power Dissipation :

48W

Vgs (Max) :

±16V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Length :

6.7056mm

Width :

2.3876mm

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Number of Elements :

1

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Turn-Off Delay Time :

23 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

Turn On Delay Time :

4 ns

JESD-609 Code :

e3

Rise Time :

35ns

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Number of Terminations :

3

FET Type :

N-Channel

Threshold Voltage :

2V

Fall Time (Typ) :

22 ns

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Mounting Type :

Through Hole

Dual Supply Voltage :

100V

Avalanche Energy Rating (Eas) :

85 mJ

Resistance :

185mOhm

Height :

6.22mm

Nominal Vgs :

2 V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Continuous Drain Current (ID) :

10A

Current Rating :

10A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Power Dissipation-Max :

48W Tc

Number of Pins :

3