IRLL3303TRPBF
- Mfr.Part #
- IRLL3303TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4.6A SOT223
- Stock
- 11,100
- In Stock :
- 11,100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.6802mm
- Case Connection :
- DRAIN
- Nominal Vgs :
- 1 V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 28 ns
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 33 ns
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Height :
- 1.8mm
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation-Max :
- 1W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±16V
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead, Lead Free
- Number of Elements :
- 1
- Turn On Delay Time :
- 7.2 ns
- Terminal Position :
- Dual
- Width :
- 3.7mm
- Continuous Drain Current (ID) :
- 4.6A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Dual Supply Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Ta
- Drain Current-Max (Abs) (ID) :
- 6.5A
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.1W
- FET Type :
- N-Channel
- Recovery Time :
- 98 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 840pF @ 25V
- Resistance :
- 31mOhm
- Published :
- 1999
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Series :
- HEXFET®
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 31m Ω @ 4.6A, 10V
- Rise Time :
- 22ns
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 1V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Current Rating :
- 4.6A
- Radiation Hardening :
- No
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
- Datasheets
- IRLL3303TRPBF

N-Channel Tape & Reel (TR) 31m Ω @ 4.6A, 10V ±16V 840pF @ 25V 50nC @ 10V TO-261-4, TO-261AA
IRLL3303TRPBF Description
The IRLL3303TRPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The IRLL3303TRPBF is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
IRLL3303TRPBF Features
-
Surface Mount
-
Dynamic dv/dt Rating
-
Logic-Level Gate Drive
-
Fast Switching
-
Ease of Paralleling
-
Advanced Process Technology
-
Ultra-Low On-Resistance
-
Lead-Free
IRLL3303TRPBF Applications
-
Mechanical testing
-
Vibration analysis
-
Ultrasonic inspection
-
Data logging
-
Induction furnaces
-
Arc furnaces and arc welders
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