IRLL3303TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

140 mJ

Qualification Status :

Not Qualified

Published :

1999

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

4.6A

ECCN Code :

EAR99

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

DS Breakdown Voltage-Min :

30V

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Drain-source On Resistance-Max :

0.031Ohm

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

37A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Transistor Application :

SWITCHING