IRLL2703PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Threshold Voltage :

2.4V

Packaging :

Tube

Nominal Vgs :

2.4 V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Published :

2004

Number of Pins :

3

Power Dissipation-Max :

1W Ta

Continuous Drain Current (ID) :

3.9A

Turn On Delay Time :

7.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Turn-Off Delay Time :

6.9 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Height :

1.7mm

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

45mOhm @ 3.9A, 10V

FET Type :

N-Channel

Current Rating :

3.9A

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

30V

Dual Supply Voltage :

30V

Power Dissipation :

2.1W

Supplier Device Package :

SOT-223

Rds On Max :

45 mΩ

Mounting Type :

Surface Mount

Number of Elements :

1

Resistance :

60mOhm

Rise Time :

24ns

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Fall Time (Typ) :

14 ns

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.7mm

Length :

6.7mm

Series :

HEXFET®

Recovery Time :

63 ns

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance :

530pF

Drain to Source Resistance :

70mOhm

Package / Case :

TO-261-4, TO-261AA