IRLL2703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Avalanche Energy Rating (Eas) :

180 mJ

Case Connection :

DRAIN

Number of Terminations :

4

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

245

Package / Case :

TO-261-4, TO-261AA

Operating Mode :

ENHANCEMENT MODE

Published :

1999

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.5A

Series :

HEXFET®

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

16A

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Vgs (Max) :

±16V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.9A, 10V

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.045Ohm

Power Dissipation-Max :

1W Ta

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G4

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Transistor Application :

SWITCHING