IRLL110TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

8 Weeks

Length :

6.7mm

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.5A

Threshold Voltage :

2V

Avalanche Energy Rating (Eas) :

50 mJ

Drain to Source Breakdown Voltage :

100V

Weight :

250.212891mg

Case Connection :

DRAIN

Power Dissipation-Max :

2W Ta 3.1W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

9.3 ns

Vgs (Max) :

±10V

Fall Time (Typ) :

18 ns

Lead Free :

Lead Free

Package / Case :

TO-261-4, TO-261AA

Rise Time :

47ns

Width :

3.7mm

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Mount :

Surface Mount

Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

JESD-30 Code :

R-PDSO-G3

Pin Count :

4

Gate to Source Voltage (Vgs) :

10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2017

Terminal Position :

Dual

Contact Plating :

Tin

Terminal Form :

Gull wing

Number of Elements :

1

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Radiation Hardening :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

1.8mm

Turn-Off Delay Time :

16 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Resistance :

540mOhm

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

540m Ω @ 900mA, 5V

Number of Pins :

4

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40