IRLL024ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Width :

3.7mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Height :

1.4478mm

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1W Ta

Turn-Off Delay Time :

20 ns

Fall Time (Typ) :

15 ns

Radiation Hardening :

No

Number of Pins :

3

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Resistance :

60mOhm

Turn On Delay Time :

8.6 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

5A

Series :

HEXFET®

Length :

6.6802mm

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Pulsed Drain Current-Max (IDM) :

40A

Vgs (Max) :

±16V

Power Dissipation :

2.8W

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Published :

2004

Rise Time :

33ns

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Continuous Drain Current (ID) :

5A

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Terminations :

4

Number of Elements :

1

Case Connection :

DRAIN