IRLI540NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

20A

Series :

HEXFET®

Dual Supply Voltage :

100V

Published :

1998

Length :

10.6mm

Turn-Off Delay Time :

39 ns

Transistor Element Material :

SILICON

Rise Time :

81ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Power Dissipation-Max :

54W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

44m Ω @ 12A, 10V

Number of Pins :

3

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Continuous Drain Current (ID) :

23A

Package / Case :

TO-220-3 Full Pack

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

62 ns

Vgs (Max) :

±16V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Width :

4.8mm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Nominal Vgs :

2 V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Isolation Voltage :

2kV

Vgs(th) (Max) @ Id :

2V @ 250μA

Resistance :

53mOhm

RoHS Status :

ROHS3 Compliant

Recovery Time :

290 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation :

42W

Case Connection :

Isolated

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Height :

9.8mm

Voltage - Rated DC :

100V

Turn On Delay Time :

11 ns

FET Type :

N-Channel

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Threshold Voltage :

2V

Element Configuration :

Single

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V