IRLI520N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

85 mJ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Packaging :

Tube

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.22Ohm

Drain Current-Max (Abs) (ID) :

8.1A

Number of Terminations :

3

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

35A

Qualification Status :

Not Qualified

Package / Case :

TO-220-3 Full Pack

DS Breakdown Voltage-Min :

100V

Published :

1998

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

30W Tc

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Vgs (Max) :

±16V

JEDEC-95 Code :

TO-220AB