IRLI2910

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

520 mJ

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Series :

HEXFET®

Published :

1998

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Surface Mount :

No

Drain-source On Resistance-Max :

0.03Ohm

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Pulsed Drain Current-Max (IDM) :

190A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

31A

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Packaging :

Tube

Power Dissipation-Max :

63W Tc

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant