IRLI2910

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Terminal Position :

Single

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

520 mJ

Series :

HEXFET®

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Not Qualified

Power Dissipation-Max :

63W Tc

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

190A

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Published :

1998

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Drain-source On Resistance-Max :

0.03Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

31A

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED