IRLI530N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1998

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

60A

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation-Max :

41W Tc

Avalanche Energy Rating (Eas) :

150 mJ

Drain Current-Max (Abs) (ID) :

12A

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.12Ohm

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB