IRLI530N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

12A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.12Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Published :

1998

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Power Dissipation-Max :

41W Tc

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

150 mJ