IRLI2505

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation-Max :

63W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

58A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

RoHS Status :

Non-RoHS Compliant

Published :

1997

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

8m Ω @ 31A, 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

360A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Reference Standard :

AEC-Q101

Number of Elements :

1

Drain-source On Resistance-Max :

0.01Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V