IRLI2505

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

8m Ω @ 31A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Packaging :

Tube

Drain-source On Resistance-Max :

0.01Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

63W Tc

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

58A

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Published :

1997

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Pulsed Drain Current-Max (IDM) :

360A

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE