IRL6372PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Threshold Voltage :

1.1V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Resistance :

17.9mOhm

Power Dissipation :

2W

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Rise Time :

13ns

Width :

4mm

Rds On (Max) @ Id, Vgs :

17.9m Ω @ 8.1A, 4.5V

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

1.1 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Base Part Number :

IRL6372PBF

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5.9 ns

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

8.1A

Series :

HEXFET®

Additional Feature :

High Reliability

Max Power Dissipation :

2W

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 25V

Height :

1.5mm

Turn-Off Delay Time :

34 ns

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Length :

5mm

Number of Elements :

2

Published :

2011

Recovery Time :

20 ns

Element Configuration :

Dual

Pulsed Drain Current-Max (IDM) :

65A