IRL6372PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Packaging :

Tube

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Additional Feature :

High Reliability

Mount :

Surface Mount

Width :

4mm

Number of Elements :

2

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

8.1A

Turn On Delay Time :

5.9 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

34 ns

Rise Time :

13ns

Pulsed Drain Current-Max (IDM) :

65A

Series :

HEXFET®

Max Power Dissipation :

2W

Base Part Number :

IRL6372PBF

Resistance :

17.9mOhm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 25V

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2W

Length :

5mm

FET Feature :

Logic Level Gate

Published :

2011

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

1.1V

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Recovery Time :

20 ns

Element Configuration :

Dual

Number of Pins :

8

Nominal Vgs :

1.1 V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

17.9m Ω @ 8.1A, 4.5V

Height :

1.5mm

RoHS Status :

ROHS3 Compliant