IRL60HS118

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Package / Case :

6-VDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

56A

Power Dissipation-Max :

11.5W Tc

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Number of Elements :

1

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer Package Identifier :

PG-TSDSON-6

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8.4 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.3V @ 10μA

RoHS Status :

ROHS3 Compliant

Height :

1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-N6

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

17m Ω @ 11A, 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

FET Type :

N-Channel

Turn-Off Delay Time :

9 ns

Threshold Voltage :

1.7V

Max Junction Temperature (Tj) :

175°C

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Published :

2013

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

18.5A

Surface Mount :

yes

Drain to Source Breakdown Voltage :

60V

Avalanche Energy Rating (Eas) :

22 mJ

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Power Dissipation :

2.5W