IRGIB7B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current Rating :

12A

Max Power Dissipation :

39W

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Case Connection :

Isolated

Collector Emitter Voltage (VCEO) :

2.2V

Packaging :

Tube

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

2.2V

Termination :

Through Hole

Turn Off Time-Nom (toff) :

220 ns

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 8A

Package / Case :

TO-220-3 Full Pack

Width :

4.826mm

Switching Energy :

160μJ (on), 160μJ (off)

Test Condition :

400V, 8A, 50 Ω, 15V

Fall Time-Max (tf) :

56ns

Current - Collector Pulsed (Icm) :

24A

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Voltage - Rated DC :

600V

Gate-Emitter Voltage-Max :

20V

Mount :

Through Hole

Transistor Application :

Motor Control

ECCN Code :

EAR99

Height :

16.12mm

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

140 ns

Turn On Delay Time :

23 ns

Turn On Time :

43 ns

Length :

10.6172mm

Power Dissipation :

39W

Max Collector Current :

12A

Gate Charge :

29nC

Reverse Recovery Time :

95 ns

Transistor Element Material :

SILICON

Number of Terminations :

3

IGBT Type :

NPT

Rise Time :

22ns

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

5.5V

Element Configuration :

Single

Published :

2004

Td (on/off) @ 25°C :

23ns/140ns