IRGC100B120KB
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- Mfr.Part #
- IRGC100B120KB
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 7,655
- In Stock ：
- 7,655
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- IGBT Type :
- NPT
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 100A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Input Type :
- Standard
- Surface Mount :
- yes
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- O-XUUC-N
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- NO LEAD
- Transistor Application :
- Motor Control
- ECCN Code :
- EAR99
- Configuration :
- Single
- Package / Case :
- Die
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Gate-Emitter Thr Voltage-Max :
- 6V
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRGC100B120KB
IRGC100B120KB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGC100B120KB Description
IRGC100B120KB transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGC100B120KB MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGC100B120KB has the common source configuration.
IRGC100B120KB Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGC100B120KB Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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