IRG4BC20KD-SPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Switching Energy :

340μJ (on), 300μJ (off)

Factory Lead Time :

18 Weeks

Gate-Emitter Thr Voltage-Max :

6V

Fall Time-Max (tf) :

110ns

Polarity/Channel Type :

N-Channel

Turn On Delay Time :

54 ns

Radiation Hardening :

No

Additional Feature :

ULTRA FAST SOFT RECOVERY

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Weight :

2G

Turn On Time :

88 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

60W

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Voltage - Rated DC :

600V

Termination :

SMD/SMT

Max Power Dissipation :

60W

JESD-609 Code :

e3

Rise Time :

37ns

Reverse Recovery Time :

37 ns

Base Part Number :

IRG4BC20KD-SPBF

Time@Peak Reflow Temperature-Max (s) :

30

Height :

4.83mm

Transistor Application :

Motor Control

Collector Emitter Voltage (VCEO) :

2.8V

Turn Off Time-Nom (toff) :

380 ns

Turn-Off Delay Time :

180 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Mount :

Surface Mount

REACH SVHC :

No SVHC

Number of Elements :

1

Max Collector Current :

16A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Current Rating :

16A

Gate Charge :

34nC

Width :

4.826mm

Test Condition :

480V, 9A, 50 Ω, 15V

Max Forward Surge Current (Ifsm) :

32A

Forward Current :

7A

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

54ns/180ns

Length :

10.668mm

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 9A

Published :

2000

Transistor Element Material :

SILICON

Element Configuration :

Single

Input Type :

Standard

Collector Emitter Saturation Voltage :

2.27V