IRFZ48VS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Form :

Gull wing

Surface Mount :

yes

Mounting Type :

Surface Mount

Published :

2001

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

72A

Number of Terminations :

2

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.012Ohm

Packaging :

Tube

Power Dissipation-Max :

150W Tc

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1985pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Peak Reflow Temperature (Cel) :

225

Pulsed Drain Current-Max (IDM) :

290A

Avalanche Energy Rating (Eas) :

166 mJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V

Series :

HEXFET®

Terminal Finish :

Tin/Lead (Sn/Pb)