IRFZ14PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

Power Dissipation :

36W

Recovery Time :

140 ns

Nominal Vgs :

4 V

Published :

2008

Number of Terminations :

3

Pbfree Code :

yes

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Current Rating :

10A

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

10A

Length :

10.41mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

43W Tc

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-220-3

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

200m Ω @ 6A, 10V

Width :

4.7mm

Weight :

6.000006g

Height :

9.01mm

Avalanche Energy Rating (Eas) :

47 mJ

Number of Channels :

1

Turn-Off Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Resistance :

200mOhm

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Number of Pins :

3

Threshold Voltage :

2V

Mount :

Through Hole

Rise Time :

50ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Case Connection :

DRAIN

Pin Count :

3

Fall Time (Typ) :

19 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Packaging :

Tube