IRFZ20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Turn-Off Delay Time :

20 ns

Additional Feature :

ULTRA LOW-ON RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Operating Temperature :

-55°C~150°C TJ

Width :

4.7mm

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

1

Number of Terminations :

3

Power Dissipation :

40W

Drain to Source Breakdown Voltage :

50V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

45ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Power Dissipation-Max :

40W Tc

Radiation Hardening :

No

FET Type :

N-Channel

Length :

10.41mm

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Turn On Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

60A

Number of Pins :

3

Resistance :

100MOhm

Published :

2014

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

15A

Fall Time (Typ) :

15 ns

Weight :

6.000006g

Factory Lead Time :

8 Weeks

Pin Count :

3

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

5 mJ

Height :

9.01mm

Transistor Application :

SWITCHING

Case Connection :

DRAIN