IRFZ10PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Length :

10.41mm

ECCN Code :

EAR99

Fall Time (Typ) :

19 ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Resistance :

200mOhm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

43W

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

REACH SVHC :

Unknown

Rise Time :

50ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Mount :

Through Hole

FET Type :

N-Channel

Published :

2011

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Height :

9.01mm

Turn-Off Delay Time :

13 ns

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

10A

Element Configuration :

Single

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Threshold Voltage :

4V

Pbfree Code :

yes

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

200m Ω @ 6A, 10V

Avalanche Energy Rating (Eas) :

47 mJ

Number of Elements :

1

Weight :

6.000006g

Pin Count :

3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Channels :

1

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

43W Tc

Operating Temperature :

-55°C~175°C TJ