IRFZ20
- Mfr.Part #
- IRFZ20
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 15A TO220AB
- Stock
- 714
- In Stock :
- 714
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Length :
- 10.41mm
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 20 ns
- Terminal Finish :
- TIN LEAD
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- JEDEC-95 Code :
- TO-220AB
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 15A
- Vgs (Max) :
- ±20V
- Width :
- 4.7mm
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 40W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 6.000006g
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Voltage - Rated DC :
- 50V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 5 mJ
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 10A, 10V
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Rise Time :
- 45ns
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Height :
- 9.01mm
- Fall Time (Typ) :
- 15 ns
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 15A
- Published :
- 2016
- Datasheets
- IRFZ20
N-Channel Tube 100m Ω @ 10A, 10V ±20V 850pF @ 25V 17nC @ 10V TO-220-3
IRFZ20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5 mJ.A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFZ20 Features
the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
IRFZ20 Applications
There are a lot of Vishay Siliconix
IRFZ20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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