IRFZ48NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

Input Capacitance :

1.97nF

Fall Time (Typ) :

50 ns

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2001

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Turn-Off Delay Time :

34 ns

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Supplier Device Package :

D2PAK

Continuous Drain Current (ID) :

64A

Current Rating :

64A

Voltage - Rated DC :

55V

Rds On (Max) @ Id, Vgs :

14mOhm @ 32A, 10V

Lead Free :

Lead Free

Power Dissipation :

140W

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 130W Tc

Mount :

Surface Mount

Series :

HEXFET®

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

55V

Rise Time :

78ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

14 mΩ

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 25V

Mounting Type :

Surface Mount