IRFZ48NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Pins :

3

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Reverse Recovery Time :

100 ns

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Series :

HEXFET®

Recovery Time :

100 ns

Mount :

Surface Mount

Power Dissipation-Max :

3.8W Ta 130W Tc

Width :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

64A

Termination :

SMD/SMT

Lead Free :

Contains Lead, Lead Free

Turn-Off Delay Time :

34 ns

Threshold Voltage :

4V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Resistance :

14mOhm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 25V

Height :

4.826mm

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

55V

Power Dissipation :

130W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

64A Tc

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

Rise Time :

78ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

14m Ω @ 32A, 10V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage - Rated DC :

55V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Current Rating :

64A

Published :

2001