IRFZ46ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

51A

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Lead Free :

Contains Lead, Lead Free

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.668mm

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation-Max :

82W Tc

Power Dissipation :

82W

Number of Elements :

1

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

97 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Voltage - Rated DC :

55V

Drain to Source Breakdown Voltage :

55V

Current Rating :

51A

Resistance :

13.6mOhm

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Turn-Off Delay Time :

37 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Series :

HEXFET®

JESD-609 Code :

e3

Published :

2010

Fall Time (Typ) :

39 ns

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

63ns

Pulsed Drain Current-Max (IDM) :

200A

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Height :

4.826mm

Terminal Form :

Gull wing

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Turn On Delay Time :

13 ns

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE