IRFZ46ZLPBF
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- Mfr.Part #
- IRFZ46ZLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 51A TO262
- Stock
- 17,278
- In Stock ：
- 17,278
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Lead Free :
- Lead Free
- Width :
- 4.826mm
- Rds On (Max) @ Id, Vgs :
- 13.6m Ω @ 31A, 10V
- FET Type :
- N-Channel
- Current Rating :
- 51A
- Voltage - Rated DC :
- 55V
- Power Dissipation :
- 82W
- Length :
- 10.668mm
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 55V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2004
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 82W Tc
- Turn-Off Delay Time :
- 37 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Rise Time :
- 63ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1460pF @ 25V
- Fall Time (Typ) :
- 39 ns
- Mount :
- Through Hole
- Height :
- 9.65mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 51A
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRFZ46ZLPBF
N-Channel Tube 13.6m Ω @ 31A, 10V ±20V 1460pF @ 25V 46nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ46ZLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1460pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFZ46ZLPBF Features
a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 37 ns
IRFZ46ZLPBF Applications
There are a lot of Infineon Technologies
IRFZ46ZLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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