IRFZ46NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn On Delay Time :

14 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Rise Time :

76ns

Threshold Voltage :

4V

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

55V

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 28A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Height :

4.826mm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

120W

Power Dissipation-Max :

3.8W Ta 107W Tc

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Width :

9.652mm

Fall Time (Typ) :

57 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

53A

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

55V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1696pF @ 25V

Packaging :

Tube

Length :

10.668mm

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Number of Pins :

3

Resistance :

16.5mOhm

Dual Supply Voltage :

55V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

JESD-609 Code :

e3

Current Rating :

53A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

53A Tc

FET Type :

N-Channel

Max Operating Temperature :

175°C

Case Connection :

DRAIN

Turn-Off Delay Time :

52 ns