IRFZ46NPBF
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- Mfr.Part #
- IRFZ46NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 53A TO220AB
- Stock
- 14,699
- In Stock ：
- 14,699
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 55V
- Turn On Delay Time :
- 14 ns
- Peak Reflow Temperature (Cel) :
- 250
- Package / Case :
- TO-220-3
- Threshold Voltage :
- 4V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Height :
- 8.77mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- 55V
- Continuous Drain Current (ID) :
- 53A
- Turn-Off Delay Time :
- 52 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 28A, 10V
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Length :
- 10.54mm
- Recovery Time :
- 101 ns
- Power Dissipation-Max :
- 107W Tc
- Nominal Vgs :
- 4 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current :
- 40A
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage :
- 55V
- Fall Time (Typ) :
- 57 ns
- Published :
- 2002
- Termination :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation :
- 88W
- Voltage - Rated DC :
- 55V
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead, Lead Free
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1696pF @ 25V
- Width :
- 4.69mm
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 53A
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Rise Time :
- 76ns
- Element Configuration :
- Single
- Lead Pitch :
- 2.54mm
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Datasheets
- IRFZ46NPBF
N-Channel Tube 16.5m Ω @ 28A, 10V ±20V 1696pF @ 25V 72nC @ 10V TO-220-3
IRFZ46NPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1696pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 53A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFZ46NPBF Features
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 52 ns
a threshold voltage of 4V
IRFZ46NPBF Applications
There are a lot of Infineon Technologies
IRFZ46NPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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