IRFZ44ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

80W Tc

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

Continuous Drain Current (ID) :

51A

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Vgs (Max) :

±20V

Current Rating :

51A

Power Dissipation :

80W

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Length :

10.668mm

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Series :

HEXFET®

Height :

4.826mm

Dual Supply Voltage :

55V

Voltage - Rated DC :

55V

Width :

9.65mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Fall Time (Typ) :

41 ns

Turn On Delay Time :

14 ns

Resistance :

13.9mOhm

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Turn-Off Delay Time :

33 ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Number of Pins :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

55V

Recovery Time :

35 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Rise Time :

68ns

Number of Elements :

1