IRFZ44Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Series :

HEXFET®

Terminal Position :

Single

Published :

2003

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

80W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Pulsed Drain Current-Max (IDM) :

200A

Drain Current-Max (Abs) (ID) :

51A

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

Avalanche Energy Rating (Eas) :

86 mJ

Drain-source On Resistance-Max :

0.0139Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Elements :

1

Package / Case :

TO-220-3

Number of Terminations :

3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube