IRFZ44NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Length :

10.668mm

Voltage - Rated DC :

55V

Fall Time (Typ) :

45 ns

Number of Channels :

1

Max Junction Temperature (Tj) :

175°C

Current Rating :

49A

ECCN Code :

EAR99

Turn On Delay Time :

12 ns

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

2V

Height :

5.084mm

Published :

2000

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Resistance :

17.5mOhm

Recovery Time :

95 ns

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

49A Tc

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Contact Plating :

Tin

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Power Dissipation :

110W

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Power Dissipation-Max :

3.8W Ta 94W Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Element Configuration :

Single

Turn-Off Delay Time :

44 ns

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Series :

HEXFET®

Nominal Vgs :

4 V

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

49A

Transistor Application :

SWITCHING

Rise Time :

60ns

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V