IRFZ44NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.826mm

Peak Reflow Temperature (Cel) :

250

Recovery Time :

95 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

83W

Voltage - Rated DC :

55V

Mount :

Through Hole

REACH SVHC :

No SVHC

Element Configuration :

Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.1V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Fall Time (Typ) :

45 ns

Number of Elements :

1

Packaging :

Tube

Drain to Source Breakdown Voltage :

55V

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Number of Terminations :

3

Series :

HEXFET®

Lead Pitch :

2.54mm

Power Dissipation-Max :

94W Tc

Resistance :

17.5mOhm

Turn-Off Delay Time :

44 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

Termination :

Through Hole

Lead Free :

Lead Free

Dual Supply Voltage :

55V

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Published :

2001

Current Rating :

49A

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Continuous Drain Current (ID) :

49A

Rise Time :

60ns

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Length :

10.668mm

Height :

8.77mm

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Nominal Vgs :

2.1 V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V