IRFZ44ESTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

192A

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

110W Tc

Drain-source On Resistance-Max :

0.023Ohm

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

48A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Published :

2004

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (Eas) :

220 mJ