IRFZ44ES

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Drain to Source Voltage (Vdss) :

60V

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

220 mJ

Drain-source On Resistance-Max :

0.023Ohm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

192A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin/Lead (Sn/Pb)

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Terminal Form :

Gull wing

Power Dissipation-Max :

110W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Peak Reflow Temperature (Cel) :

225

Drain Current-Max (Abs) (ID) :

48A

Terminal Position :

Single

FET Type :

N-Channel

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V