IRFZ44EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Number of Elements :

1

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Dual Supply Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Power Dissipation-Max :

110W Tc

Rise Time :

60ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Lead Pitch :

2.54mm

Series :

HEXFET®

Voltage - Rated DC :

60V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Through Hole

Mount :

Through Hole

Number of Terminations :

3

Turn-Off Delay Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

250

REACH SVHC :

No SVHC

FET Type :

N-Channel

Resistance :

23mOhm

JEDEC-95 Code :

TO-220AB

Published :

1999

Height :

8.77mm

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

48A

Current Rating :

48A

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Termination :

Through Hole

Nominal Vgs :

4 V

Threshold Voltage :

4V

Qualification Status :

Not Qualified

Length :

10.5156mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

110W

Width :

4.69mm

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Avalanche Energy Rating (Eas) :

220 mJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED