IRFZ34NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

55V

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.04Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Avalanche Energy Rating (Eas) :

130 mJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

100A

Published :

1997

Power Dissipation-Max :

3.8W Ta 68W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

29A

JESD-609 Code :

e3