IRFZ34EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Packaging :

Tube

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Power Dissipation-Max :

68W Tc

FET Type :

N-Channel

Height :

8.77mm

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

60V

Termination :

Through Hole

Turn-Off Delay Time :

5.1 ns

Rise Time :

30ns

Current Rating :

28A

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Width :

4.69mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

42m Ω @ 17A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

68W

ECCN Code :

EAR99

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Lead Free :

Lead Free

Resistance :

42mOhm

Continuous Drain Current (ID) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Current - Continuous Drain (Id) @ 25°C :

28A Tc

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Voltage - Rated DC :

60V

Series :

HEXFET®

Length :

10.5156mm

Dual Supply Voltage :

60V

RoHS Status :

RoHS Compliant

Lead Pitch :

2.54mm

Published :

2003

Turn On Delay Time :

5.1 ns