IRFZ34E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

65 mJ

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Drain Current-Max (Abs) (ID) :

28A

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

42m Ω @ 17A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

100A

Published :

1997

Drain-source On Resistance-Max :

0.042Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

JESD-609 Code :

e3

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

60V

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

68W Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

FET Type :

N-Channel

Qualification Status :

Not Qualified