IRFZ34E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

65 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

28A

Mounting Type :

Through Hole

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Surface Mount :

No

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.042Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Published :

1997

Power Dissipation-Max :

68W Tc

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

42m Ω @ 17A, 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Package / Case :

TO-220-3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Pulsed Drain Current-Max (IDM) :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V