IRFZ24NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Element Configuration :

Single

Voltage - Rated DC :

55V

Turn On Delay Time :

4.9 ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Number of Channels :

1

Fall Time (Typ) :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Elements :

1

Termination :

Through Hole

Length :

10.5156mm

Continuous Drain Current (ID) :

17A

Power Dissipation-Max :

45W Tc

Contact Plating :

Tin

Case Connection :

DRAIN

Series :

HEXFET®

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Max Junction Temperature (Tj) :

175°C

Pulsed Drain Current-Max (IDM) :

68A

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Turn-Off Delay Time :

19 ns

Gate to Source Voltage (Vgs) :

20V

Height :

19.8mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

34ns

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Vgs (Max) :

±20V

Power Dissipation :

45W

Transistor Application :

SWITCHING

Number of Terminations :

3

Nominal Vgs :

4 V

FET Type :

N-Channel

Package / Case :

TO-220-3

Width :

4.69mm

Resistance :

70mOhm

JEDEC-95 Code :

TO-220AB

Lead Pitch :

2.54mm

Threshold Voltage :

2V

Current Rating :

17A

Factory Lead Time :

12 Weeks

Dual Supply Voltage :

55V

Lead Free :

Lead Free

Radiation Hardening :

No

Published :

1999

Operating Mode :

ENHANCEMENT MODE