IRFZ24NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

71 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

68A

Published :

1997

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

3.8W Ta 45W Tc

Series :

HEXFET®

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.07Ohm

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain Current-Max (Abs) (ID) :

17A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube