IRFU3410PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

13 ns

Threshold Voltage :

4V

Case Connection :

DRAIN

Nominal Vgs :

4 V

JESD-609 Code :

e3

Mount :

Through Hole

Number of Pins :

3

Vgs (Max) :

±20V

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

27ns

Packaging :

Tube

Length :

6.7056mm

Continuous Drain Current (ID) :

31A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Lead Free :

Lead Free

Published :

2004

Width :

2.3876mm

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3W Ta 110W Tc

Transistor Application :

SWITCHING

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Power Dissipation :

110W

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Current Rating :

31A

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

31A Tc

ECCN Code :

EAR99

Height :

6.22mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn On Delay Time :

12 ns

Resistance :

39Ohm

Radiation Hardening :

No

REACH SVHC :

No SVHC