IRFU1018EPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Height :

6.22mm

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

79A

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Rise Time :

35ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Resistance :

8.4mOhm

Element Configuration :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

39 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Width :

2.3876mm

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

55 ns

JESD-609 Code :

e3

Length :

6.7056mm

Lead Free :

Lead Free

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

110W Tc

Avalanche Energy Rating (Eas) :

88 mJ

Published :

2009

Number of Pins :

3

Case Connection :

DRAIN

Mounting Type :

Through Hole

Power Dissipation :

110W

Radiation Hardening :

No

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Continuous Drain Current (ID) :

56A

Number of Terminations :

3

Fall Time (Typ) :

46 ns

Vgs (Max) :

±20V