IRFU014PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Lead Free :

Lead Free

Length :

6.73mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

27.4 mJ

Width :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 25W Tc

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Element Configuration :

Single

Pbfree Code :

yes

Height :

6.22mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

200m Ω @ 4.6A, 10V

Mounting Type :

Through Hole

Number of Terminations :

3

Turn-Off Delay Time :

13 ns

REACH SVHC :

Unknown

Fall Time (Typ) :

19 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

7.7A

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Transistor Application :

SWITCHING

Lead Length :

9.65mm

DS Breakdown Voltage-Min :

60V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Power Dissipation :

2.5W

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

10 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

3

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Mount :

Through Hole

Weight :

329.988449mg

Resistance :

200mOhm

Rise Time :

50ns