IRFU020PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Published :

2016

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Additional Feature :

FAST SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

42 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

2.39mm

Weight :

329.988449mg

Case Connection :

DRAIN

Rise Time :

58ns

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

2.5W Ta 42W Tc

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

FET Type :

N-Channel

JESD-609 Code :

e3

Height :

6.22mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 8.4A, 10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

14A

Pulsed Drain Current-Max (IDM) :

56A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Number of Channels :

1

Turn-Off Delay Time :

25 ns

Length :

6.73mm

ECCN Code :

EAR99

Mount :

Through Hole

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ