IRFR9N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.38Ohm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

100 mJ

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Terminal Position :

Single

Power Dissipation-Max :

86W Tc

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Gull wing

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

200V

JEDEC-95 Code :

TO-252AA

Published :

2000

Drain Current-Max (Abs) (ID) :

9.4A

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

38A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

HEXFET®

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

ECCN Code :

EAR99