IRF3808STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Max Junction Temperature (Tj) :

175°C

Transistor Element Material :

SILICON

Series :

HEXFET®

Case Connection :

DRAIN

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Height :

4.83mm

Length :

10.668mm

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

200W Tc

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

120 ns

Turn-Off Delay Time :

68 ns

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

550A

Number of Elements :

1

Drain to Source Breakdown Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Rise Time :

140ns

Turn On Delay Time :

16 ns

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Mount :

Surface Mount

Continuous Drain Current (ID) :

106A

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Resistance :

7mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

200W

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ