IRF3808SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Number of Terminations :

2

Voltage - Rated DC :

75V

Turn-Off Delay Time :

68 ns

Dual Supply Voltage :

75V

Element Configuration :

Single

Continuous Drain Current (ID) :

106A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current Rating :

106A

Drain to Source Breakdown Voltage :

75V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

200W

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

ECCN Code :

EAR99

Case Connection :

DRAIN

Fall Time (Typ) :

120 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Nominal Vgs :

4 V

Resistance :

7mOhm

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

75A

Published :

2002

Transistor Application :

SWITCHING

Reverse Recovery Time :

93 ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Mounting Type :

Surface Mount

Rise Time :

140ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mount :

Surface Mount

Height :

4.826mm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

550A

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Turn On Delay Time :

16 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Power Dissipation-Max :

200W Tc

Number of Elements :

1