IRF3805STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

940 mJ

Power Dissipation :

130W

Voltage - Rated DC :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Current Rating :

75A

Width :

9.65mm

Turn On Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Continuous Drain Current (ID) :

75A

Forward Voltage :

1.3V

Height :

4.699mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Element Configuration :

Single

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Radiation Hardening :

No

Number of Elements :

1

Mount :

Surface Mount

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

890A

Drain to Source Breakdown Voltage :

55V

Rise Time :

20ns

Power Dissipation-Max :

300W Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Resistance :

3.3MOhm

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Fall Time (Typ) :

87 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Length :

10.668mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

87 ns

JESD-30 Code :

R-PSSO-G2