IRF3805STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

890A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Element Configuration :

Single

Turn On Delay Time :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Voltage - Rated DC :

55V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

940 mJ

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

3.3MOhm

Continuous Drain Current (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

Power Dissipation :

130W

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

87 ns

Terminal Form :

Gull wing

Height :

4.699mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Threshold Voltage :

4V

Lead Free :

Contains Lead

Published :

2004

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Forward Voltage :

1.3V

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Number of Elements :

1

Rise Time :

20ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Fall Time (Typ) :

87 ns

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSSO-G2

Current Rating :

75A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

HEXFET®

Mounting Type :

Surface Mount

Radiation Hardening :

No